P channel enhancement mode Field effect transistor
Kapsel SOT-23
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 73pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 360mW (Ta)
Rds On (Max) @ Id, Vgs 10 Ohm @ 100mA, 5V
Operating Temperature -55°C ~ 150°C (TJ)
